Finfet structures with fins recessed beneath the gate

Abstract

A semiconductor structure may include a semiconductor fin, a gate over the semiconductor fin, a spacer on a sidewall of the gate, an angled recess region in an end of the semiconductor fin beneath the spacer, and a first semiconductor region filling the angled recess. The angled recess may be v-shaped or sigma shaped. The structure may further include a second semiconductor region in contact with the first semiconductor region and the substrate. The structure may be formed by forming a gate above a portion of the semiconductor fin on a substrate, forming a spacer on a sidewall of the gate; removing a portion of the semiconductor fin not covered by the spacer or the gate to expose a sidewall of the fin, etching the sidewall of the fin to form an angled recess region beneath the spacer, and filling the angled recess region with a first epitaxial semiconductor region.