The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Oct. 27, 2014
Globalfoundries Inc., Grand Cayman, KY;
Kevin K. Chan, Staten Island, NY (US);
Yue Ke, Fishkill, NY (US);
Annie Levesque, Wappingers Falls, NY (US);
Dae-Gyu Park, Poughquag, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Amanda L. Tessier, Poughkeepsie, NY (US);
Min Yang, Yorktown Heights, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A gate structure is formed straddling a first portion of a plurality of semiconductor fins that extend upwards from a topmost surface of an insulator layer. A dielectric spacer is formed on sidewalls of the gate structure and straddling a second portion of the plurality of semiconductor fins. Epitaxial semiconductor material portions that include a non-planar bottommost surface and a non-planar topmost surface are grown from at least the exposed sidewalls of each semiconductor fin not including the gate structure or the gate spacer to merge adjacent semiconductor fins. A gap is present beneath epitaxial semiconductor material portions and the topmost surface of the insulator layer. A second epitaxial semiconductor material is formed on the epitaxial semiconductor material portions and thereafter the second epitaxial semiconductor material is converted into a metal semiconductor alloy.