Guilderland, NY, United States of America

Curtis Durfee


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):

Title: Curtis Durfee: Innovator in Semiconductor Technology

Introduction

Curtis Durfee is a notable inventor based in Guilderland, NY (US), recognized for his contributions to semiconductor technology. With a focus on advanced materials and device structures, he has made significant strides in the field.

Latest Patents

Durfee holds a patent for a "Device with highly active acceptor doping and method of production thereof." This innovative device features a triple-layer EPI stack comprising SiGe, Ge, and Si, with Ga confined within. The design includes an EPI stack positioned over a plurality of fins, with the Si layer capping the Ge layer, which in turn caps the SiGe layer underneath. This configuration allows for enhanced performance in semiconductor applications.

Career Highlights

Curtis Durfee is currently employed at Globalfoundries Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing new methods for producing high-performance devices.

Collaborations

Durfee collaborates with talented colleagues such as Tek Po Rinus Lee and Annie Levesque, contributing to a dynamic and innovative work environment.

Conclusion

Curtis Durfee's work exemplifies the spirit of innovation in the semiconductor industry. His patent and ongoing contributions highlight the importance of advanced materials and methods in developing next-generation technologies.

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