Globalfoundries Inc.

Curtis Durfee

Hui Zang

Rishikesh Krishnan

Bharat V Krishnan

Tek Po Rinus Lee

Qun Gao

Annie Levesque

A device including a triple-layer EPI stack including SiGe, Ge, and Si, respectively, with Ga confined therein, and method of production thereof. Embodiments include an EPI stack including a SiGe layer, a Ge layer, and a Si layer over a plurality of fins, the EPI stack positioned between and over a portion of sidewall spacers, wherein the Si layer is a top layer capping the Ge layer, and wherein the Ge layer is a middle layer capping the SiGe layer underneath; and a Ga layer in a portion of the Ge layer between the SiGe layer and the Si layer.

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Guilderland, NY, United States of America

Curtis Durfee