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For the Inventor, By the Inventor

Malta, NY, United States of America

Tek Po Rinus Lee

USPTO Granted Patents = 14

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 92(Granted Patents)


Location History:

  • Albany, NY (US) (2017 - 2019)
  • Ballston Spa, NY (US) (2019 - 2020)
  • Malta, NY (US) (2017 - 2021)

Company Filing History:

goldMedal14 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2017-2021

where 'Filed Patents' based on already Granted Patents

14 patents (USPTO):
1. 10886178 - Device with highly active acceptor doping and method of production thereof (2021-01-05),
2. 10872979 - Spacer structures for a transistor device (2020-12-22),
3. 10629739 - Methods of forming spacers adjacent gate structures of a transistor device (2020-04-21),
4. 10276683 - Common metal contact regions having different Schottky barrier heights and methods of manufacturing same (2019-04-30),
5. 10263122 - Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a vertical field effect transistor (2019-04-16),
6. 10242982 - Method for forming a protection device having an inner contact spacer and the resulting devices (2019-03-26),
7. 10230000 - Vertical-transport transistors with self-aligned contacts (2019-03-12),
8. 10170544 - Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region (2019-01-01),
9. 10109714 - Buried contact structures for a vertical field-effect transistor (2018-10-23),
10. 10103238 - Nanosheet field-effect transistor with full dielectric isolation (2018-10-16),
11. 9876077 - Methods of forming a protection layer on an isolation region of IC products comprising FinFET devices (2018-01-23),
12. 9831317 - Buried contact structures for a vertical field-effect transistor (2017-11-28),
13. 9812543 - Common metal contact regions having different Schottky barrier heights and methods of manufacturing same (2017-11-07),
14. 9570552 - Forming symmetrical stress liners for strained CMOS vertical nanowire field-effect transistors (2017-02-14),

Title: Innovator Spotlight: Tek Po Rinus Lee

Introduction:

Tek Po Rinus Lee, a prolific inventor based in Malta, NY (US), has made significant contributions to the world of technology with a total of 14 patents to his name. Known for his groundbreaking work in semiconductor devices, Lee continues to push the boundaries of innovation in his field.

Latest Patents:

Among his latest patents is the "Device with Highly Active Acceptor Doping and Method of Production Thereof." This patent describes a device that includes a triple-layer EPI (epitaxial) stack with SiGe, Ge, and Si layers, along with Ga confinement. The innovative method of production outlined in this patent showcases Lee's expertise in advanced semiconductor technologies.

Another notable invention is the "Spacer Structures for a Transistor Device," which introduces an integrated circuit product featuring a transistor device with unique structural elements such as low-k sidewall spacers and high-k spacers. This patent reflects Lee's commitment to enhancing the performance and efficiency of semiconductor devices.

Career Highlights:

Tek Po Rinus Lee is an accomplished professional who currently works at GlobalFoundries Inc., a leading semiconductor company known for its cutting-edge technologies and manufacturing capabilities. His role at GlobalFoundries allows him to leverage his expertise in semiconductor design and fabrication to drive innovation and create impactful solutions for the industry.

Collaborations:

In his professional journey, Lee has collaborated with esteemed colleagues such as Ruilong Xie and Hui Zang. Together, they have worked on pioneering projects that have shaped the landscape of semiconductor technology and contributed to the advancement of the industry.

Conclusion:

Tek Po Rinus Lee stands out as a visionary inventor who continues to inspire with his ingenuity and dedication to technological advancement. His impressive portfolio of patents and his collaborative spirit underscore his invaluable contributions to the field of semiconductor devices. As he remains at the forefront of innovation, Lee's work serves as a testament to the power of creativity and expertise in driving progress in the world of technology.

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