The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Mar. 04, 2016
Globalfoundries Inc., Grand Cayman, KY;
Tek Po Rinus Lee, Malta, NY (US);
Jinping Liu, Ballston lake, NY (US);
Ruilong Xie, Niskayuna, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods for forming a semiconductor device having dual Schottky barrier heights using a single metal and the resulting device are provided. Embodiments include providing a substrate having an n-FET region and a p-FET region, each region including a gate between source/drain regions; applying a mask over the n-FET region; selectively amorphizing a surface of the p-FET region source/drain regions while the n-FET region is masked; removing the mask; depositing a titanium-based metal over the n-FET and p-FET region source/drain regions; and microwave annealing.