The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Jan. 30, 2020
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Chung Foong Tan, Ballston Spa, NY (US);

Guowei Xu, Ballston Lake, NY (US);

Haiting Wang, Clifton Park, NY (US);

Yue Zhong, Ballston Lake, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Tek Po Rinus Lee, Ballston Spa, NY (US);

Scott Beasor, Greenwich, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 21/768 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/30608 (2013.01); H01L 21/76829 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01);
Abstract

An integrated circuit product is disclosed that includes a transistor device that includes a final gate structure, a gate cap, a low-k sidewall spacer positioned on and in contact with opposing sidewalls of the final gate structure, first and second contact etch stop layers (CESLs) located on opposite sides of the final gate structure, whereby the CESLs are positioned on and in contact with the low-k sidewall spacer, and a high-k spacer located on opposite sides of the final gate structure, wherein the high-k spacer is positioned in recesses formed in an upper portion of the CESLs.


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