IDiyas

For the Inventor, By the Inventor

Ballston Lake, NY, United States of America

Guowei Xu

USPTO Granted Patents = 26 

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 40(Granted Patents)


Company Filing History:

goldMedal24 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2018-2021

where 'Filed Patents' based on already Granted Patents

26 patents (USPTO):
1. 10978566 - Middle of line structures (2021-04-13),
2. 10923469 - Vertical resistor adjacent inactive gate over trench isolation (2021-02-16),
3. 10879180 - FinFET with etch-selective spacer and self-aligned contact capping layer (2020-12-29),
4. 10872979 - Spacer structures for a transistor device (2020-12-22),
5. 10818659 - FinFET having upper spacers adjacent gate and source/drain contacts (2020-10-27),
6. 10811409 - Method of manufacturing FinFET with reduced parasitic capacitance and FinFET structure formed thereby (2020-10-20),
7. 10797049 - FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same (2020-10-06),
8. 10784143 - Trench isolation preservation during transistor fabrication (2020-09-22),
9. 10734233 - FinFET with high-k spacer and self-aligned contact capping layer (2020-08-04),
10. 10692987 - IC structure with air gap adjacent to gate structure and methods of forming same (2020-06-23),
11. 10685881 - Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a semiconductor device (2020-06-16),
12. 10658363 - Cut inside replacement metal gate trench to mitigate N-P proximity effect (2020-05-19),
13. 10651173 - Single diffusion cut for gate structures (2020-05-12),
14. 10636893 - Replacement metal gate with reduced shorting and uniform chamfering (2020-04-28),
15. 10636890 - Chamfered replacement gate structures (2020-04-28),

Title: Guowei Xu: Innovator in Semiconductor Technologies

Introduction

Guowei Xu, a notable inventor based in Ballston Lake, NY, has made significant contributions to the field of semiconductor technologies. With an impressive portfolio that includes 26 patents, Xu has been pivotal in developing innovative solutions that enhance the performance and efficiency of integrated circuits.

Latest Patents

Guowei Xu's latest patents showcase his expertise in semiconductor structures. One such patent is for "Middle of Line Structures," which pertains to advanced semiconductor designs and manufacturing methods. This invention includes a plurality of gate structures featuring source and/or drain metallization, spacers composed of distinct materials, and electrical contacts strategically positioned for optimal performance.

Another notable patent is focused on "Vertical Resistor Adjacent Inactive Gate Over Trench Isolation." This innovation involves an integrated circuit design that incorporates an active area with active fin-type field effect transistors (FinFETs) and trench isolation. The introduction of a vertically extending resistor body offers a solution to reduce interconnect layer thickness and significantly diminishes the footprint of resistors, thereby enabling scaling in semiconductor applications.

Career Highlights

Throughout his career, Guowei Xu has been associated with leading organizations in the semiconductor industry. He has worked at GlobalFoundries Inc. and GlobalFoundries U.S. Inc., where he has applied his innovative ideas to bring advancements in semiconductor engineering and manufacturing.

Collaborations

Collaboration is an integral part of innovation, and Xu has worked alongside talented professionals, including Hui Zang and Haiting Wang. These collaborations have enhanced the development of his patented technologies and contributed to the success of various projects within the industry.

Conclusion

Guowei Xu’s continued commitment to innovation within semiconductor technologies underscores his role as a leading inventor in the field. His patented inventions reflect a blend of creativity and technical expertise that supports the ongoing evolution of electronic devices and integrated circuits. As the tech landscape evolves, Xu's contributions will likely continue to shape the future of semiconductor applications.

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