The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Oct. 19, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Haiting Wang, Clifton Park, NY (US);

Guowei Xu, Ballston Lake, NY (US);

Hui Zang, Guilderland, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4991 (2013.01); H01L 21/7682 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

The disclosure provides an integrated circuit (IC) structure including a first spacer on a semiconductor fin adjacent a first portion of the gate structure, and having a first height above the semiconductor fin; a second spacer on the semiconductor fin adjacent the first spacer, such that the first spacer is horizontally between the first portion of the gate structure and a lower portion of the outer; and a gate cap positioned over the first portion of the gate structure and on the second spacer above the semiconductor fin. The gate cap defines an air gap horizontally between the first portion of the gate structure and an upper portion of the second spacer, and vertically between an upper surface of the first spacer and a lower surface of the gate cap.


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