The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Jan. 10, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Hui Zang, Guilderland, NY (US);
Guowei Xu, Ballston Lake, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Yurong Wen, Singapore, SG;
Garo J. Derderian, Saratoga Springs, NY (US);
Shesh M. Pandey, Saratoga Springs, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);
Abstract
An integrated circuit (IC) includes an active area including at least one active fin-type field effect transistor (FinFET), and a trench isolation adjacent to the active area. At least one inactive gate is positioned over the trench isolation. A vertically extending resistor body is positioned adjacent the at least one inactive gate over the trench isolation. A lower end of the resistor is below an upper surface of the trench isolation. The resistor reduces interconnect layer thickness to improve yield, and significantly reduces resistor footprint to enable scaling.