The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Oct. 25, 2018
Globalfoundries Inc., Grand Cayman, KY;
Hui Zang, Guilderland, NY (US);
Haiting Wang, Clifton Park, NY (US);
Chung Foong Tan, Ballston Spa, NY (US);
Guowei Xu, Ballston Lake, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Scott H. Beasor, Greenwich, NY (US);
Liu Jiang, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A FinFET structure having reduced effective capacitance and including a substrate having at least two fins thereon laterally spaced from one another, a metal gate over fin tops of the fins and between sidewalls of upper portions of the fins, source/drain regions in each fin on opposing sides of the metal gate, and a dielectric bar within the metal gate located between the sidewalls of the upper portions of the fins, the dielectric bar being laterally spaced away from the sidewalls of the upper portions of the fins within the metal gate.