The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Jul. 18, 2017
Globalfoundries Inc., Grand Cayman, KY;
Hui Zang, Guilderland, NY (US);
Tek Po Rinus Lee, Albany, NY (US);
Haigou Huang, Rexford, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Min Gyu Sung, Latham, NY (US);
Chanro Park, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods for forming a structure for a nanosheet field-effect transistor. A body feature is formed that includes a plurality of nanosheet channel layers and a plurality of first sacrificial layers that are alternatingly arranged with the nanosheet channel layers. The body feature is located on a second sacrificial layer. The first sacrificial layers are recessed relative to the nanosheet channel layers to form a plurality of first cavities indented into a sidewall of the body feature. A plurality of dielectric spacers are formed that fill the first cavities. After forming the dielectric spacers, the second sacrificial layer is removed with an etching process to define a second cavity that extends completely beneath the body feature. A dielectric layer is formed in the second cavity.