The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Jan. 24, 2018
Globalfoundries Inc., Grand Cayman, KY;
Rishikesh Krishnan, Cohoes, NY (US);
Joseph K. Kassim, Menands, NY (US);
Bharat V. Krishnan, Mechanicville, NY (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Rinus Tek Po Lee, Malta, NY (US);
Yiheng Xu, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
An insulator is formed by flowable chemical vapor deposition (FCVD) process. The insulator is cured by exposing the insulator to ultraviolet light while flowing ozone over the insulator to produce a cured insulator. The curing process forms nitrogen, hydrogen, nitrogen monohydride, or hydroxyl-rich atomic clusters in the insulator. Following the curing process, these methods select wavelengths of microwave radiation (that will be subsequently used during annealing) so that such wavelengths excite the nitrogen, hydrogen, nitrogen monohydride, or hydroxyl-rich atomic clusters. Then, these methods anneal the cured insulator by exposing the cured insulator to microwave radiation in an inert (e.g., non-oxidizing) ambient atmosphere, at a temperature below 500° C., so as to increase the density of the cured insulator.