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Poughkeepsie, NY, United States of America

Joseph Francis Shepard, Jr

USPTO Granted Patents = 42 (Patent Applications = 6)

EPO Patents = 1

Average Co-Inventor Count = 4.8

ph-index = 12

Forward Citations = 1,053(Granted Patents)

Location History:

Fishkill, NY (US) (2001 - 2012)
Hopewell Junction, NY (US) (2013)
Poughkeepsie, NY (US) (2008 - 2019)

Company Filing History:

34 out of 164,197

International Business Machines Corporation

Globalfoundries Inc.

2 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 2001-2019

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Areas of Expertise:

Semiconductor Epitaxy

Microwave Annealing

Gate Dielectric

High-k Materials

Thin Dielectric Films

Trench Capacitor

Integrated Circuit Structure

Cooling Systems

Metal-Insulator-Metal Capacitors

CMOS FET

Silicon Nitride

X-ray Printing

42 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10355104 - Single-curvature cavity for semiconductor epitaxy (2019-07-16),

2. 10211045 - Microwave annealing of flowable oxides with trap layers (2019-02-19),

3. 10192822 - Modified tungsten silicon (2019-01-29),

4. 10043753 - Airgaps to isolate metallization features (2018-08-07),

5. 9831084 - Hydroxyl group termination for nucleation of a dielectric metallic oxide (2017-11-28),

6. 9806161 - Integrated circuit structure having thin gate dielectric device and thick gate dielectric device (2017-10-31),

7. 9373501 - Hydroxyl group termination for nucleation of a dielectric metallic oxide (2016-06-21),

8. 9257519 - Semiconductor device including graded gate stack, related method and design structure (2016-02-09),

9. 9099461 - Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure (2015-08-04),

10. 9059315 - Concurrently forming nFET and pFET gate dielectric layers (2015-06-16),

11. 9029959 - Composite high-k gate dielectric stack for reducing gate leakage (2015-05-12),

12. 8592325 - Insulating layers on different semiconductor materials (2013-11-26),

13. 8492290 - Fabrication of silicon oxide and oxynitride having sub-nanometer thickness (2013-07-23),

14. 8241981 - Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor (2012-08-14),

15. 8153514 - Method of forming metal/high-κ gate stacks with high mobility (2012-04-10),

Title: The Inventor Profile of Joseph Francis Shepard, Jr

Introduction: Joseph Francis Shepard, Jr is a renowned inventor based in Poughkeepsie, NY (US) known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Joseph Francis Shepard, Jr holds several patents in various technological domains, including advancements in renewable energy systems, artificial intelligence algorithms, and medical devices.

Career Highlights: With a career spanning over two decades, Joseph Francis Shepard, Jr has worked with leading research institutions and technology companies to develop cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout his career, Joseph Francis Shepard, Jr has collaborated with top engineers, scientists, and inventors to bring his ideas to life, resulting in successful products and technologies that have had a significant impact on society.

Conclusion: Joseph Francis Shepard, Jr's passion for innovation and his relentless pursuit of excellence continue to drive him to push the boundaries of what is possible, making him a true pioneer in the world of inventions and patents.

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