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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Joseph Francis Shepard, Jr

This inventor holds 42 USPTO granted patents and 6 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: International Business Machines Corporation, Globalfoundries Inc., Other. Active years: 2001-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joseph Francis Shepard, Jr. Retrieved from https://idiyas.com/inventor/joseph-francis-shepard-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42 

% Patents Active = 38.1


Average Co-Inventor Count = 4.8

ph-index = 12

Forward Citations = 1,053(Granted Patents)


Location History:

  • Fishkill, NY (US) (2001 - 2012)
  • Hopewell Junction, NY (US) (2013)
  • Poughkeepsie, NY (US) (2008 - 2019)

Company Filing History:

goldMedal34 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal8 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 2001-2019

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Areas of Expertise:
Gate Dielectrics
High-k Materials
MIM Capacitors
Silicon Oxynitride
Nitrogen Distribution
Nitrided Silicon Oxide
Thin Dielectric Films
Integrated Circuit Structures
Cooling Systems
Chip Carriers
Epitaxy
Microwave Annealing
42 patents (USPTO):Explore Patents
1. 10355104 - Single-curvature cavity for semiconductor epitaxy (2019-07-16),
2. 10211045 - Microwave annealing of flowable oxides with trap layers (2019-02-19),
3. 10192822 - Modified tungsten silicon (2019-01-29),
4. 10043753 - Airgaps to isolate metallization features (2018-08-07),
5. 9831084 - Hydroxyl group termination for nucleation of a dielectric metallic oxide (2017-11-28),
6. 9806161 - Integrated circuit structure having thin gate dielectric device and thick gate dielectric device (2017-10-31),
7. 9373501 - Hydroxyl group termination for nucleation of a dielectric metallic oxide (2016-06-21),
8. 9257519 - Semiconductor device including graded gate stack, related method and design structure (2016-02-09),
9. 9099461 - Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure (2015-08-04),
10. 9059315 - Concurrently forming nFET and pFET gate dielectric layers (2015-06-16),
11. 9029959 - Composite high-k gate dielectric stack for reducing gate leakage (2015-05-12),
12. 8592325 - Insulating layers on different semiconductor materials (2013-11-26),
13. 8492290 - Fabrication of silicon oxide and oxynitride having sub-nanometer thickness (2013-07-23),
14. 8241981 - Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor (2012-08-14),
15. 8153514 - Method of forming metal/high-κ gate stacks with high mobility (2012-04-10),

Title: The Inventor Profile of Joseph Francis Shepard, Jr

Introduction: Joseph Francis Shepard, Jr is a renowned inventor based in Poughkeepsie, NY (US) known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Joseph Francis Shepard, Jr holds several patents in various technological domains, including advancements in renewable energy systems, artificial intelligence algorithms, and medical devices.

Career Highlights: With a career spanning over two decades, Joseph Francis Shepard, Jr has worked with leading research institutions and technology companies to develop cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout his career, Joseph Francis Shepard, Jr has collaborated with top engineers, scientists, and inventors to bring his ideas to life, resulting in successful products and technologies that have had a significant impact on society.

Conclusion: Joseph Francis Shepard, Jr's passion for innovation and his relentless pursuit of excellence continue to drive him to push the boundaries of what is possible, making him a true pioneer in the world of inventions and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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