The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Nov. 15, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KI;
Inventors:
Michael P. Chudzik, Ridgefield, CT (US);
Min Dai, Mahwah, NJ (US);
Jinping Liu, Hopewell Junction, NY (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Keith K. H. Wong, Wappingers Falls, NY (US);
Assignee:
GlobalFoundries, Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/336 (2006.01); H01L 29/49 (2006.01); H01L 29/47 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/28202 (2013.01); H01L 29/47 (2013.01); H01L 29/51 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate; and a gate structure disposed directly on the substrate, the gate structure including: a graded region with a varied material concentration profile; and a metal layer disposed on the graded region.