Mahwah, NJ, United States of America

Min Dai

USPTO Granted Patents = 20 

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 36(Granted Patents)


Location History:

  • Mahwah, NJ (US) (2013 - 2017)
  • Allendale, NJ (US) (2014 - 2017)

Company Filing History:


Years Active: 2013-2017

where 'Filed Patents' based on already Granted Patents

20 patents (USPTO):

Title: Min Dai: Innovator in Semiconductor Technologies

Introduction

Min Dai, an accomplished inventor based in Mahwah, NJ, has made significant contributions to the field of semiconductor technologies. With an impressive portfolio of 20 patents, Dai's work primarily focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

Among his latest innovations, Dai has developed a patented method titled "Hydroxyl group termination for nucleation of a dielectric metallic oxide." This invention outlines a process where a semiconductor-containing dielectric material or oxynitride/nitride surface is treated with a basic solution, resulting in hydroxyl group termination of the surface. Following this treatment, a dielectric metal oxide is deposited through atomic layer deposition. This technique ensures a uniform surface condition that facilitates nucleation and minimizes interfacial defects. Furthermore, the treatment enhances the removal of oxide from silicon germanium alloy surfaces with higher germanium concentrations, reducing thickness variations across differing compositions.

Another notable patent focuses on "Field effect transistors having multiple effective work functions." In this innovation, selective deposition of a silicon-germanium surface layer on semiconductor surfaces enables the formation of two distinct channel regions for field effect transistors. By annealing an adjustment oxide material on a combination of silicon-based and high-k gate dielectrics, Dai's approach induces oxygen deficiency in specific portions of the high-k layer. This selective modification allows for the deposition of multiple work function metallic materials, resulting in gate electrodes that exhibit various effective work functions.

Career Highlights

Min Dai has held pivotal roles at leading technology companies, including IBM and GlobalFoundries Inc. His extensive experience in these prestigious organizations has honed his expertise in semiconductor innovations and patent development.

Collaborations

Throughout his career, Dai has collaborated with notable colleagues such as Michael Patrick Chudzik and Jinping Liu. These partnerships have contributed to the advancement of semiconductor technology and the successful development of multiple patents.

Conclusion

Min Dai's innovative contributions have significantly impacted the semiconductor industry, enhancing the functionality and efficiency of electronic devices. His dedication to research and development continues to push the boundaries of technology, marking him as a pivotal figure in modern semiconductor advancements.

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