The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Aug. 13, 2012
Takashi Ando, Tuckahoe, NY (US);
Min Dai, Mahwah, NJ (US);
Martin M. Frank, Dobbs Ferry, NY (US);
Barry P. Linder, Hastings-on-Hudson, NY (US);
Shahab Siddiqui, White Plains, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Min Dai, Mahwah, NJ (US);
Martin M. Frank, Dobbs Ferry, NY (US);
Barry P. Linder, Hastings-on-Hudson, NY (US);
Shahab Siddiqui, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A limited number of cycles of atomic layer deposition (ALD) of Hi-K material followed by deposition of an interlayer dielectric and application of further Hi-K material and optional but preferred annealing provides increased Hi-K material content and increased breakdown voltage for input/output (I/O) transistors compared with logic transistors formed on the same chip or wafer while providing scalability of the inversion layer of the I/O and logic transistors without significantly compromising performance or bias temperature instability (BTI) parameters.