The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Oct. 31, 2012
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Grand Cayman Islands, KY;
Michael P. Chudzik, Danbury, CT (US);
Min Dai, Mahwah, NJ (US);
Xiang Hu, Malta, NY (US);
Jinping Liu, Hopewell Junction, NY (US);
Yanxiang Liu, Wappingers Falls, NY (US);
Xiaodong Yang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Global Foundries, Inc., Grand Cayman Islands, KY;
Abstract
A method of manufacturing a semiconductor device including a replacement metal gate process incorporating a conductive dummy gate layer (e.g., silicon germanium (SiGe), titanium nitride, etc.) and a related are disclosed. The method includes forming an oxide layer on a substrate; removing a gate portion of the oxide layer from the substrate in a first region of the semiconductor device; forming a conductive dummy gate layer on the semiconductor device in the first region; and forming a gate on the semiconductor device, the gate including a gate conductor disposed in the first region and directly connected to the substrate.