The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Dec. 14, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Michael P. Chudzik, Sunnyvale, CA (US);

Min Dai, Mahwah, NJ (US);

Dominic J. Schepis, Wappingers Falls, NY (US);

Shahab Siddiqui, Somers, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 27/092 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823857 (2013.01); H01L 21/28176 (2013.01); H01L 27/092 (2013.01); H01L 29/517 (2013.01);
Abstract

A method of manufacturing a semiconductor structure, and the resultant structure. The method includes forming an oxide layer above a substrate. The method includes forming a metal layer above the oxide layer. The method includes forming a first capping layer above the metal layer. A material forming the first capping layer may be titanium oxide, or titanium oxynitride. The method includes annealing the semiconductor structure. Annealing the semiconductor structure may result in diffusing a metal from the metal layer into the oxide layer.


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