The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Oct. 03, 2015
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Min Dai, Mahwah, NJ (US);
Martin M. Frank, Dobbs Ferry, NY (US);
David F. Hilscher, Poughkeepsie, NY (US);
Rishikesh Krishnan, Poughkeepsie, NY (US);
Barry P. Linder, Hastings-on-Hudson, NY (US);
Claude Ortolland, Peekskill, NY (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.