The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Jun. 29, 2012
Maryjane Brodsky, Salt Point, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Min Dai, Mahwah, NJ (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Shahab Siddiqui, White Plains, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Jinping Liu, Hopewell Junction, NY (US);
MaryJane Brodsky, Salt Point, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Min Dai, Mahwah, NJ (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Shahab Siddiqui, White Plains, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Jinping Liu, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A composite high dielectric constant (high-k) gate dielectric includes a stack of a doped high-k gate dielectric and an undoped high-k gate dielectric. The doped high-k gate dielectric can be formed by providing a stack of a first high-k dielectric material layer and a dopant metal layer and annealing the stack to induce the diffusion of the dopant metal into the first high-k dielectric material layer. The undoped high-k gate dielectric is formed by subsequently depositing a second high-k dielectric material layer. The composite high-k gate dielectric can provide an increased gate-leakage oxide thickness without increasing inversion oxide thickness.