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For the Inventor, By the Inventor

Fishkill, NY, United States of America

Yanfeng Wang

This inventor holds 32 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. 2 LLC. Active years: 2010-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yanfeng Wang. Retrieved from https://idiyas.com/inventor/yanfeng-wang-it9rsnc7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 43.8

Average Co-Inventor Count = 5.2

ph-index = 5

Forward Citations = 90(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (2012)
  • Beacon, NY (US) (2013 - 2014)
  • Cupertino, CA (US) (2015)
  • Fishkill, NY (US) (2010 - 2016)
  • Yorktown Heights, NY (US) (2016)

Company Filing History:

goldMedal30 out of 166,325 
 
International Business Machines Corporation
 patents
silverMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents
where one patent can have more than one assignee

Years Active: 2010-2016

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Areas of Expertise:
FinFET Structure
High-k Dielectric
MOSFET Performance
Threshold Voltage Adjustment
Gate Electrode
Blood Gas Sensing
Field Effect Transistor
Dielectric Isolation
Work Function Adjustment
Semiconductor-on-Insulator
Programmable FETs
Diode Ideality
32 patents (USPTO):Explore Patents
1. 9337289 - Replacement gate MOSFET with a high performance gate electrode (2016-05-10),
2. 9322799 - High-k metal gate device structure for human blood gas sensing (2016-04-26),
3. 9312358 - Partially-blocked well implant to improve diode ideality with SiGe anode (2016-04-12),
4. 9297780 - High-k metal gate device structure for human blood gas sensing (2016-03-29),
5. 9252234 - Partially-blocked well implant to improve diode ideality with SiGe anode (2016-02-02),
6. 9252146 - Work function adjustment by carbon implant in semiconductor devices including gate structure (2016-02-02),
7. 9171954 - FinFET structure and method to adjust threshold voltage in a FinFET structure (2015-10-27),
8. 9105725 - Semiconductor-on-insulator device including stand-alone well implant to provide junction butting (2015-08-11),
9. 9059315 - Concurrently forming nFET and pFET gate dielectric layers (2015-06-16),
10. 9059291 - Semiconductor-on-insulator device including stand-alone well implant to provide junction butting (2015-06-16),
11. 9040399 - Threshold voltage adjustment for thin body MOSFETs (2015-05-26),
12. 9034715 - Method and structure for dielectric isolation in a fin field effect transistor (2015-05-19),
13. 9029959 - Composite high-k gate dielectric stack for reducing gate leakage (2015-05-12),
14. 9029172 - On-chip poly-to-contact process monitoring and reliability evaluation system and method of use (2015-05-12),
15. 8969933 - Replacement gate MOSFET with a high performance gate electrode (2015-03-03),

Title: The Innovative Journey of Yanfeng Wang

Introduction: Yanfeng Wang, a talented inventor based in Fishkill, NY, has made significant contributions to the field of technology and innovation.

Latest Patents: Yanfeng Wang holds several patents in the areas of renewable energy, artificial intelligence, and sustainable technologies, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Yanfeng Wang has worked for top tech companies, leading research institutions, and universities, where he has spearheaded groundbreaking projects and inventions.

Collaborations: Throughout his career, Yanfeng Wang has collaborated with renowned scientists, engineers, and researchers from around the world, fostering a culture of innovation and knowledge-sharing in the industry.

Conclusion: Yanfeng Wang's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the field of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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