The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Feb. 28, 2013
International Business Machines Corporation, Armonk, NY (US);
Zhengwen Li, Danbury, CT (US);
Dechao Guo, Wappinger Falls, NY (US);
Randolph F. Knarr, Albany, NY (US);
Chengwen Pei, Danbury, CT (US);
Gan Wang, Fishkill, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Jian Yu, Danbury, CT (US);
Jun Yuan, San Diego, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.