The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Jan. 20, 2012
Applicants:

Fen Chen, Williston, VT (US);

Roger A. Dufresne, Fairfax, VT (US);

Timothy D. Sullivan, Underhill, VT (US);

Yanfeng Wang, Fishkill, NY (US);

Inventors:

Fen Chen, Williston, VT (US);

Roger A. Dufresne, Fairfax, VT (US);

Timothy D. Sullivan, Underhill, VT (US);

Yanfeng Wang, Fishkill, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); H01L 22/12 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An on-chip poly-to-contact process monitoring and reliability evaluation system and method of use are provided. A method includes determining a breakdown electrical field of each of one or more shallow trench isolation (STI) measurement structures corresponding to respective one or more original semiconductor structures. The method further includes determining a breakdown voltage of each of one or more substrate measurement structures corresponding to the respective one or more original semiconductor structures. The method further includes determining a space between a gate and a contact of each of the one or more original semiconductor structures based on the determined breakdown electrical field and the determined breakdown voltage.


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