The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Sep. 06, 2012
Applicants:
Dechao Guo, Fishkill, NY (US);
Wilfried E. Haensch, Somers, NY (US);
Gan Wang, Fishkill, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Xin Wang, Beacon, NY (US);
Inventors:
Dechao Guo, Fishkill, NY (US);
Wilfried E. Haensch, Somers, NY (US);
Gan Wang, Fishkill, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Xin Wang, Beacon, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/165 (2006.01); H01L 21/425 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66356 (2013.01); H01L 29/165 (2013.01); H01L 29/7391 (2013.01); H01L 29/1608 (2013.01);
Abstract
A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.