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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9171954 B1

PDFFull Text
Expired
Date of Patent:
Oct. 27, 2015

Filed:

Nov. 10, 2014

Finfet structure and method to adjust threshold voltage in a finfet structure

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Eduard A. Cartier, New York, NY (US);

Brian J. Greene, Wappingers Falls, NY (US);

Dechao Guo, Niskayuna, NY (US);

Gan Wang, Fishkill, NY (US);

Yanfeng Wang, Cupertino, CA (US);

Keith Kwong Hon Wong, Wappingers Falls, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. 2 LLC, Hopewell Juncion, NY (US);

Attorneys:

Yuanmin Cai

Roberts Mlotkowski Safran & Cole, P.C.

Primary Examiner:

Errol Fernandes

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02323 (2013.01); H01L 21/28017 (2013.01); H01L 27/1211 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01);
Abstract

FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.

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Cartier, Eduard. (2015). Finfet structure and method to adjust threshold voltage in a finfet structure (U.S. Patent No. 9171954). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9171954

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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