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For the Inventor, By the Inventor

Salt Point, NY, United States of America

Maryjane Brodsky

USPTO Granted Patents = 13 

Average Co-Inventor Count = 4.1

ph-index = 6

Forward Citations = 106(Granted Patents)


Company Filing History:

goldMedal13 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal1 out of 5,671 
 
Globalfoundries Inc.
 patents
where one patent can have more than one assignee

Years Active: 2007-2015

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13 patents (USPTO):
1. 9059315 - Concurrently forming nFET and pFET gate dielectric layers (2015-06-16),
2. 9040399 - Threshold voltage adjustment for thin body MOSFETs (2015-05-26),
3. 9029959 - Composite high-k gate dielectric stack for reducing gate leakage (2015-05-12),
4. 8952460 - Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices (2015-02-10),
5. 8809152 - Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices (2014-08-19),
6. 8198169 - Deep trench capacitor in a SOI substrate having a laterally protruding buried strap (2012-06-12),
7. 7888723 - Deep trench capacitor in a SOI substrate having a laterally protruding buried strap (2011-02-15),
8. 7875919 - Shallow trench capacitor compatible with high-K / metal gate (2011-01-25),
9. 7759766 - Electrical fuse having a thin fuselink (2010-07-20),
10. 7671394 - Embedded trench capacitor having a high-k node dielectric and a metallic inner electrode (2010-03-02),
11. 7454302 - Method of inspecting integrated circuits during fabrication (2008-11-18),
12. 7397556 - Method, apparatus, and computer program product for optimizing inspection recipes using programmed defects (2008-07-08),
13. 7310585 - Method of inspecting integrated circuits during fabrication (2007-12-18),

Title: Maryjane Brodsky: Innovator in Semiconductor Technology

Introduction

Maryjane Brodsky is a prominent inventor based in Salt Point, NY (US), known for her significant contributions to semiconductor technology. With a total of 13 patents, she has made remarkable advancements in the field, particularly in the development of gate dielectric layers for transistors.

Latest Patents

Among her latest patents is a method for concurrently forming nFET and pFET gate dielectric layers. This innovative approach includes techniques for creating a high-k layer above a substrate with both pFET and nFET regions. The process involves the formation of sacrificial layers and work-function metal layers, followed by annealing to establish the desired gate dielectric layers. Another notable patent addresses threshold voltage adjustment for thin body MOSFETs, utilizing a fin comprised of Silicon implanted with Carbon to achieve specific voltage thresholds.

Career Highlights

Maryjane has worked with leading companies in the industry, including International Business Machines Corporation (IBM) and Globalfoundries Inc. Her work has been instrumental in advancing semiconductor technologies, particularly in the fabrication of FinFET transistors.

Collaborations

Throughout her career, Maryjane has collaborated with esteemed colleagues such as Kangguo Cheng and Michael Patrick Chudzik, contributing to various innovative projects in the semiconductor field.

Conclusion

Maryjane Brodsky's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in the industry. Her work continues to influence advancements in transistor technology and semiconductor manufacturing.

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