The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Jan. 18, 2008
Maryjane Brodsky, Salt Point, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Herbert L. Ho, New Windsor, NY (US);
Paul C. Parries, Wappingers Falls, NY (US);
Kevin R. Winstel, Poughkeepsie, NY (US);
MaryJane Brodsky, Salt Point, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Herbert L. Ho, New Windsor, NY (US);
Paul C. Parries, Wappingers Falls, NY (US);
Kevin R. Winstel, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that is selective to the buried insulator layer. The deep trench is then etched below a bottom surface of the buried insulator layer. Ion implantation is performed at an angle into the deep trench to dope the sidewalls of the deep trench beneath the buried insulator layer, while the laterally recessed sidewalls of the top semiconductor layer are not implanted with dopant ions. A node dielectric and trench fill materials are deposited into the deep trench. A buried strap has an upper buried strap sidewall that is offset from a lower buried strap sidewall and a deep trench sidewall.