The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jun. 07, 2012
Michael P. Chudzik, Ridgefield, CT (US);
Min Dai, Mahwah, NJ (US);
Jinping Liu, Hopewell Junction, NY (US);
Paul A. Ronsheim, Barneveld, WI (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Shahab Siddiqui, White Plains, NY (US);
Michael P. Chudzik, Ridgefield, CT (US);
Min Dai, Mahwah, NJ (US);
Jinping Liu, Hopewell Junction, NY (US);
Paul A. Ronsheim, Barneveld, WI (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Shahab Siddiqui, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.