Hopewell Junction, NY, United States of America

Paul Andrew Ronsheim

USPTO Granted Patents = 18 (Patent Applications = 2)

Average Co-Inventor Count = 4.3

ph-index = 7

Forward Citations = 280(Granted Patents)

Location History:

Wappingers Falls, NY (US) (1993 - 1997)
Hopewell Junction, NY (US) (2000 - 2014)
Barneveld, WI (US) (2015)

Company Filing History:

15 out of 164,108

International Business Machines Corporation

Renesas Electronics America Inc.

patents

4. 1 out of 2,867

Stmicroelectronics Gmbh

patents

5. 3 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 1993-2015

where 'Filed Patents' based on already Granted Patents

18 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9099461 - Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure (2015-08-04),

2. 8900973 - Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion (2014-12-02),

3. 8347741 - Specimen handling apparatus (2013-01-08),

4. 8158449 - Particle emission analysis for semiconductor fabrication steps (2012-04-17),

5. 8114748 - Shallow extension regions having abrupt extension junctions (2012-02-14),

6. 7071103 - Chemical treatment to retard diffusion in a semiconductor overlayer (2006-07-04),

7. 6749684 - Method for improving CVD film quality utilizing polysilicon getterer (2004-06-15),

8. 6635517 - Use of disposable spacer to introduce gettering in SOI layer (2003-10-21),

9. 6509241 - Process for fabricating an MOS device having highly-localized halo regions (2003-01-21),

10. 6399434 - Doped structures containing diffusion barriers (2002-06-04),

11. 6387782 - Process of forming an ultra-shallow junction dopant layer having a peak concentration within a dielectric layer (2002-05-14),

12. 6335262 - Method for fabricating different gate oxide thicknesses within the same chip (2002-01-01),

13. 6329704 - Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer (2001-12-11),

14. 6194736 - Quantum conductive recrystallization barrier layers (2001-02-27),

15. 6114257 - Process for modified oxidation of a semiconductor substrate using (2000-09-05),

Title: The Innovative Mind of Paul Andrew Ronsheim

Introduction:

Paul Andrew Ronsheim, a prolific inventor based in Hopewell Junction, NY, has made significant contributions to the field of semiconductor devices. With an impressive portfolio of 18 patents, Ronsheim's work stands as a testament to his pioneering spirit in technological advancements.

Latest Patents:

Among his latest patents is a groundbreaking method for manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices. This involves forming a dielectric region on a substrate, annealing it in an ammonia environment, monitoring the nitrogen peak, and adjusting environmental parameters accordingly. Additionally, Ronsheim has developed a method to enable compressively strained pFET channels in a FinFET structure through implant and thermal diffusion techniques.

Career Highlights:

Ronsheim's career has been marked by his tenure at prestigious companies such as International Business Machines Corporation, known as IBM. During his time at these industry giants, Ronsheim has consistently pushed the boundaries of innovation in semiconductor technology, leading to the successful implementation of his patented concepts.

Collaborations:

Working alongside talented individuals such as Huajie Chen and Dan Mihai Mocuta, Ronsheim has fostered a collaborative environment conducive to ingenuity and progress. Together, they have shared insights, expertise, and a passion for pioneering new technologies that have driven the industry forward.

Conclusion:

In conclusion, Paul Andrew Ronsheim's inventive spirit and dedication to advancing semiconductor technology have solidified his reputation as a trailblazer in the field. His patents and collaborations are a testament to his exceptional talent and unwavering commitment to shaping the future of innovation in the realm of semiconductor devices.

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2 patents pending:

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