The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Dec. 17, 1998
Applicant:
Inventors:
Susan E. Chaloux, Wappingers Falls, NY (US);
Tze-Chiang Chen, Yorktown Heights, NY (US);
Johnathan E. Faltermeier, LaGrange, NY (US);
Ulrike Gruening, Wappingers Falls, NY (US);
Rajarao Jammy, Wappingers Falls, NY (US);
Jack A. Mandelman, Stormville, NY (US);
Christopher C. Parks, Beacon, NY (US);
Paul C. Parries, Wappingers Falls, NY (US);
Paul A. Ronsheim, Hopewell Junction, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
Reduced scale structures of improved reliability and/or increased composition options are enabled by the creation and use of quantum conductive recrystallization barrier layers. The quantum conductive layers are preferably used in trench capacitors to act as recrystallization barriers.