Susan E Chaloux

Title: The Innovations of Susan E Chaloux

Introduction

Susan E Chaloux is a notable inventor based in Wappingers Falls, NY (US). She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on improving the reliability and efficiency of electronic components.

Latest Patents

Among her latest patents are innovative designs such as "Doped structures containing diffusion barriers" and "Structures containing quantum conductive barrier layers." These patents detail improved reliability structures that utilize quantum conductive layers in conjunction with thin regions of amorphous or microcrystalline semiconductor material. The advancements she has made are particularly beneficial when integrated into trench capacitors, as they help reduce or eliminate low temperature fails and single cell fails in DRAM circuits.

Career Highlights

Throughout her career, Susan has worked with prominent companies, including International Business Machines Corporation (IBM). Her expertise in semiconductor technology has positioned her as a key player in the industry, contributing to advancements that enhance electronic device performance.

Collaborations

Susan has collaborated with esteemed colleagues such as Rajarao Jammy and Johnathan E Faltermeier. These partnerships have fostered innovation and have been instrumental in the development of her patented technologies.

Conclusion

Susan E Chaloux's contributions to semiconductor technology and her innovative patents reflect her dedication to advancing the field. Her work continues to influence the reliability of electronic components, showcasing her impact as an inventor.