The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Apr. 26, 2000
Susan E. Chaloux, Wappingers Falls, NY (US);
Caroline Aussilhou, Le Coudray-Montceaux, FR;
Corinne Buchet, Corbeil Essonnes, FR;
Heidi L. Greer, Essex Junction, VT (US);
Rajarao Jammy, Wappingers Falls, NY (US);
Patrick Raffin, Joinville le Pont, FR;
Francis Rodier, Mondeville, FR;
Jean-Marc Rousseau, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporated into trench capacitors to reduce or eliminate the occurrence of low temperature fails and single cell fails in DRAM circuits.