The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Aug. 30, 2011
Nathaniel C. Berliner, Albany, NY (US);
Pranita Kulkarni, Slingerlands, NY (US);
Nicolas Loubet, Albany, NY (US);
Kingsuk Maitra, Guilderland, NY (US);
Sanjay C. Mehta, Niskayuna, NY (US);
Paul A. Ronsheim, Hopewell Junction, NY (US);
Toyoji Yamamoto, Yokohama, JP;
Zhengmao Zhu, Pougkeepsie, NY (US);
Nathaniel C. Berliner, Albany, NY (US);
Pranita Kulkarni, Slingerlands, NY (US);
Nicolas Loubet, Albany, NY (US);
Kingsuk Maitra, Guilderland, NY (US);
Sanjay C. Mehta, Niskayuna, NY (US);
Paul A. Ronsheim, Hopewell Junction, NY (US);
Toyoji Yamamoto, Yokohama, JP;
Zhengmao Zhu, Pougkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Santa Clara, CA (US);
Renesas Electronics America Inc., Santa Clara, CA (US);
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
A method of making a semiconductor device patterns a first fin in a pFET region, and patterns a second fin in an nFET region. A plurality of conformal microlayers containing a straining material are deposited on the first and second fins. A protective cap material is formed on the first fin, and the conformal layers are selectively removed from the second fin. The straining material is then thermally diffused into the first fin. The protective cap material is removed from the first fin after the thermal annealing and after the conformal micro layers are selectively removed from the second fin.