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For the Inventor, By the Inventor

Slingerlands, NY, United States of America

Pranita Kulkarni

This inventor holds 94 USPTO granted patents and 21 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66772). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Renesas Electronics America Inc.. Active years: 2011-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pranita Kulkarni. Retrieved from https://idiyas.com/inventor/pranita-kulkarni

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 94 

% Patents Active = 55.3

Average Co-Inventor Count = 4.6

ph-index = 16

Forward Citations = 1,069(Granted Patents)

Forward Citations (Not Self Cited) = 1,052(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Singerlands, NY (US) (2014)
  • Mount Kisco, NY (US) (2014 - 2015)
  • Albany, NY (US) (2011 - 2016)
  • Slingerlands, NY (US) (2012 - 2016)
  • Hopewell Junction, NY (US) (2012 - 2016)

Company Filing History:

goldMedal91 out of 166,325 
 
International Business Machines Corporation
 patents
silverMedal7 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 283 
 
Renesas Electronics America Inc.
 patents
4. 1 out of 2,891 
 
Stmicroelectronics Gmbh
 patents
where one patent can have more than one assignee

Years Active: 2011-2016

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Areas of Expertise:
FinFET Structures
MOSFET Designs
Strain Management
Integrated Circuits
Charge Carrier Mobility
Shallow Trench Isolation
Resistor Fabrication
Buried Channel Transistors
Memory Circuits
Field-Effect Transistors
Doping Profile Control
High-K Metal Gates
94 patents (USPTO):Explore Patents
1. 9478658 - Device and method for fabricating thin semiconductor channel and buried strain memorization layer (2016-10-25),
2. 9461169 - Device and method for fabricating thin semiconductor channel and buried strain memorization layer (2016-10-04),
3. 9385050 - Structure and method to fabricate resistor on finFET processes (2016-07-05),
4. 9263537 - Methods of forming a semiconductor device with a protected gate cap layer and the resulting device (2016-02-16),
5. 9105577 - MOSFET with work function adjusted metal backgate (2015-08-11),
6. 9059321 - Buried channel field-effect transistors (2015-06-16),
7. 9059292 - Source and drain doping profile control employing carbon-doped semiconductor material (2015-06-16),
8. 9059243 - Shallow trench isolation structures (2015-06-16),
9. 9054211 - Compressively stressed FET device structures (2015-06-09),
10. 9048108 - Integrated circuit with on chip planar diode and CMOS devices (2015-06-02),
11. 9041116 - Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) (2015-05-26),
12. 8994085 - Integrated circuit including DRAM and SRAM/logic (2015-03-31),
13. 8928096 - Buried-channel field-effect transistors (2015-01-06),
14. 8906754 - Methods of forming a semiconductor device with a protected gate cap layer and the resulting device (2014-12-09),
15. 8900973 - Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion (2014-12-02),

Title: Pranita Kulkarni: A Pioneer in Semiconductor Innovations

Introduction

Pranita Kulkarni is a distinguished inventor based in Slingerlands, NY, known for her remarkable contributions to the field of semiconductor technology. With an impressive portfolio of 94 patents, she has made significant strides in the development of innovative solutions that enhance semiconductor performance.

Latest Patents

Among her latest patents are two notable inventions: a device and method for fabricating a thin semiconductor channel and a buried strain memorization layer. This innovative method involves the intricate processing of a substrate that includes a dielectric layer between two semiconductor layers. By transforming the second semiconductor layer into an amorphized material and depositing a stress layer on the first layer, the wafer is subsequently annealed. This process allows for the memorization of stress in the second semiconductor layer by recrystallizing the amorphized material, showcasing a significant advancement in semiconductor fabrication.

Career Highlights

Pranita has had an illustrious career, having worked with renowned organizations like International Business Machines Corporation (IBM) and Globalfoundries Inc. Her time at these companies has enabled her to collaborate with some of the brightest minds in the industry, further enhancing her expertise and innovative capabilities within the semiconductor field.

Collaborations

Throughout her career, Pranita has collaborated with talented individuals, including Kangguo Cheng and Ali Khakifirooz. These partnerships have played a crucial role in the successful development of her inventions and patents, highlighting the importance of teamwork in the realm of technological advancements.

Conclusion

Pranita Kulkarni stands as a testament to the spirit of innovation in the semiconductor industry. Her dedication to her craft is reflected in her extensive patent portfolio and the impactful work she has accomplished throughout her career. As she continues to push the boundaries of what's possible, her contributions will undoubtedly pave the way for future advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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