The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9385050 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 05, 2016

Filed:

Jan. 06, 2011
Applicants:

Wilfried Ernst-august Haensch, Somers, NY (US);

Pranita Kulkarni, Slingerlands, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Inventors:

Wilfried Ernst-August Haensch, Somers, NY (US);

Pranita Kulkarni, Slingerlands, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/845 (2013.01); H01L 27/1211 (2013.01);
Abstract

A structure comprises first and at least second fin structures are formed. Each of the first and at least second fin structures has a vertically oriented semiconductor body. The vertically oriented semiconductor body is comprised of vertical surfaces. A doped region in each of the first and at least second fin structures is comprised of a concentration of dopant ions present in the semiconductor body to form a first resistor and at least a second resistor, and a pair of merged fins formed on outer portions of the doped regions of the first and at least second fin structures. The pair of merged fins is electrically connected so that the first and at least second resistors are electrically connected in parallel with each other.


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