The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Oct. 28, 2014
Globalfoundries Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Daniel Pham, Clifton Park, NY (US);
Xiuyu Cai, Niskayuna, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Pranita Kulkarni, Hopewell Junction, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Abstract
One method disclosed herein includes forming first and second gate cap protection layers that encapsulate and protect a gate cap layer. A novel transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate, a spacer structure positioned adjacent the gate structure, a layer of insulating material positioned above the substrate and around the spacer structure, a gate cap layer positioned above the gate structure and the spacer structure, and a gate cap protection material that encapsulates the gate cap layer, wherein portions of the gate cap protection material are positioned between the gate cap layer and the gate structure, the spacer structure and the layer of insulating material.