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For the Inventor, By the Inventor

Niskayuna, NY, United States of America

Xiuyu Cai

USPTO Granted Patents = 162 

Average Co-Inventor Count = 3.8

ph-index = 19

Forward Citations = 1,073(Granted Patents)

DiyaCoin DiyaCoin = 1.35 


Inventors with similar research interests:


Location History:

  • Albany, NY (US) (2013 - 2017)
  • Niskayuna, NY (US) (2014 - 2022)

Company Filing History:

goldMedal158 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal109 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal51 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
where one patent can have more than one assignee

Years Active: 2013-2022

where 'Filed Patents' based on already Granted Patents

162 patents (USPTO):
1. 11374111 - Forming replacement low-k spacer in tight pitch fin field effect transistors (2022-06-28),
2. 10749031 - Large area contacts for small transistors (2020-08-18),
3. 10734499 - Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling (2020-08-04),
4. 10629743 - Semiconductor structure including low-K spacer material (2020-04-21),
5. 10622457 - Forming replacement low-K spacer in tight pitch fin field effect transistors (2020-04-14),
6. 10622357 - FinFET including tunable fin height and tunable fin width ratio (2020-04-14),
7. 10593780 - Forming replacement low-K spacer in tight pitch fin field effect transistors (2020-03-17),
8. 10546856 - CMOS structure having low resistance contacts and fabrication method (2020-01-28),
9. 10446665 - Method and structure for protecting gates during epitaxial growth (2019-10-15),
10. 10388754 - Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling (2019-08-20),
11. 10361311 - Semiconductor structure including low-k spacer material (2019-07-23),
12. 10355086 - High doped III-V source/drain junctions for field effect transistors (2019-07-16),
13. 10355020 - FinFETs having strained channels, and methods of fabricating finFETs having strained channels (2019-07-16),
14. 10290636 - Semiconductor device having fins with in-situ doped, punch-through stopper layer and related methods (2019-05-14),
15. 10276573 - FinFET including tunable fin height and tunable fin width ratio (2019-04-30),

Title: Xiuyu Cai: Pioneering Innovator in Semiconductor Technology

Introduction:

In the world of semiconductor technology, Xiuyu Cai stands out as a prominent innovator. With a location in Niskayuna, NY, he has contributed significantly to the field with his prolific patent portfolio and groundbreaking inventions. This article delves into Cai's latest patents, career highlights, notable collaborations, and his invaluable contributions to the industry.

Latest Patents:

Cai's most recent patents showcase his expertise in advancing semiconductor devices and integrated circuits. One notable invention is the "Forming replacement low-k spacer in tight pitch fin field effect transistors." This patent describes a unique semiconductor device with a composite spacer to enhance its performance. By incorporating different dielectric constants within the spacer, Cai's invention optimizes the performance of fin field effect transistors.

Another groundbreaking patent by Cai is the "Large area contacts for small transistors." This invention revolutionizes the integration of large area electrical contacts in integrated circuits. By introducing a non-planar, sloped bottom profile, Cai addresses the challenge of contact resistance while maintaining a small contact footprint. This innovation has the potential to significantly improve the performance and efficiency of various semiconductor devices.

Career Highlights:

Cai has an impressive portfolio of 162 patents, demonstrating his deep expertise and dedication to the field. Throughout his career, he has made significant contributions while working with esteemed companies like Globalfoundries Inc. and IBM (International Business Machines Corporation). Cai's expertise in semiconductor technology has earned him recognition as a leading figure in the industry.

Collaborations:

In his ventures, Cai has collaborated with talented individuals who share his passion for innovation in semiconductor technology. Notably, he has worked with coworkers Ruilong Xie and Kangguo Cheng. These collaborations have played a crucial role in the development of novel inventions, enriching the global semiconductor landscape.

Conclusion:

Xiuyu Cai has emerged as a pioneering force within the realm of semiconductor technology. His extensive patent portfolio, including inventions such as forming replacement low-k spacers and large area contacts, has pushed boundaries and opened new avenues for advancements in integrated circuits. With his work, Cai has made a lasting impact on the industry, contributing to the development of cutting-edge semiconductor devices. As an accomplished innovator, Cai continues to leave a remarkable legacy in the field.

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