IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10622357 B1

PDFFull Text
Date of Patent:
Apr. 14, 2020

Filed:

Mar. 06, 2019

Finfet including tunable fin height and tunable fin width ratio

Applicants:

International Business Machines Corporation, Armonk, NY (US);

Globalfoundries, Inc., Grand Cayman, KY;

Stmicroelectronics, Inc., Coppell, TX (US);

Inventors:

Xiuyu Cai, Niskayuna, NY (US);

Qing Liu, Watervliet, NY (US);

Ruilong Xie, Schenectady, NY (US);

Chun-Chen Yeh, Danbury, CT (US);

Assignees:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

GLOBALFOUNDRIES, INC., , KY;

STMICROELECTRONICS, INC., Coppell, TX (US);

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/033 (2006.01); H01L 21/8238 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0922 (2013.01); H01L 27/1211 (2013.01); H01L 29/0684 (2013.01); H01L 29/1054 (2013.01); H01L 29/16 (2013.01); H01L 29/165 (2013.01); H01L 29/7849 (2013.01);
Abstract

A semiconductor substrate includes a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to define a height. A plurality of hetero semiconductor fins includes an epitaxial material formed on a first region of the bulk substrate layer. A plurality of non-hetero semiconductor fins is formed on a second region of the bulk substrate layer different from the first region. The non-hetero semiconductor fins are integrally formed from the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.

Find Patent Forward Citations

Loading…