The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
May. 22, 2018
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Cayman Islands, KY;
Xiuyu Cai, Niskayuna, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Ruilong Xie, Niskayuna, NY (US);
Tenko Yamashita, Schenectady, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Methods for forming a semiconductor device include forming a first spacer on a plurality of fins. A second spacer is formed on the first spacer, the second spacer being formed from a different material from the first spacer. Gaps between the fins are filled with a support material. The first spacer and second spacer are polished to expose a top surface of the plurality of fins. All of the support material is etched away after polishing the first spacer and second spacer. The plurality of fins is etched below a bottom level of the first spacer to form a fin cavity. Material from the first spacer is removed to expand the fin cavity. Fin material is grown directly on the etched plurality of fins to fill the fin cavity.