The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Jun. 14, 2016
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries, Inc., Grand Cayman, KY;
Stmicroelectronics, Inc., Coppell, TX (US);
Xiuyu Cai, Niskayuna, NY (US);
Qing Liu, Watervliet, NY (US);
Kejia Wang, Harrison, NY (US);
Ruilong Xie, Schenectady, NY (US);
Chun-Chen Yeh, Clifton Park, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
GLOBALFOUNDRIES, INC., , KY;
STMICROELECTRONICS, INC., Coppell, TX (US);
Abstract
A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a III-V material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate comprising an undoped III-V material between doped III-V materials, the doped III-V materials including a dopant in an amount in a range from about 1eto about 1eatoms/cmand contacting the epitaxial contacts.