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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388754 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Nov. 04, 2016

Unmerged epitaxial process for finfet devices with aggressive fin pitch scaling

Applicants:

International Business Machines Corporation, Armonk, NY (US);

Globalfoundries Inc., Cayman Islands, KY;

Inventors:

Xiuyu Cai, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Ali Khakifirooz, Los Altos, CA (US);

Ruilong Xie, Niskayuna, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Assignees:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Brigitte A Paterson

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6653 (2013.01); H01L 21/2018 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31053 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/7853 (2013.01);
Abstract

Semiconductor devices and methods for making the same includes conformally forming a first spacer on multiple fins. A second spacer is conformally formed on the first spacer, the second spacer being formed from a different material from the first spacer. The fins are etched below a bottom level of the first spacer to form a fin cavity. Material from the first spacer is removed to expand the fin cavity. Fin material is grown directly on the etched fins to fill the fin cavity.

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