The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jan. 15, 2020
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Grand Cayman, KY;
Stmicroelectronics, Inc., Coppell, TX (US);
Xiuyu Cai, Niskayuna, NY (US);
Chun-Chen Yeh, Danbury, CT (US);
Qing Liu, Irvine, CA (US);
Ruilong Xie, Niskayuna, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
STMICROELECTRONICS, INC., Coppell, TX (US);
Abstract
A semiconductor device that a fin structure, and a gate structure present on a channel region of the fin structure. A composite spacer is present on a sidewall of the gate structure including an upper portion having a first dielectric constant, a lower portion having a second dielectric constant that is less than the first dielectric constant, and an etch barrier layer between sidewalls of the first and second portion of the composite spacer and the gate structure. The etch barrier layer may include an alloy including at least one of silicon, boron and carbon.