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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Daniel T Pham

This inventor holds 16 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., International Business Machines Corporation, Samsung Electronics Co., Ltd.. Active years: 2014-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel T Pham. Retrieved from https://idiyas.com/inventor/daniel-t-pham

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 62.5

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 266(Granted Patents)


Company Filing History:

goldMedal16 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal4 out of 166,425 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2014-2016

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Areas of Expertise:
Semiconductor Device
Gate Structures
3D Devices
Mobility Channels
Fin Field Effect Transistor
Nanowire Channel
Stress Memorization Film
Silicon Seed Layer
Replacement Gate Technique
Self-Aligned Contact
Diffusion Break
Enhanced Mobility
16 patents (USPTO):Explore Patents
1. 9466491 - Methods of forming a semiconductor device with a spacer etch block cap and the resulting device (2016-10-11),
2. 9419137 - Stress memorization film and oxide isolation in fins (2016-08-16),
3. 9263585 - Methods of forming enhanced mobility channel regions on 3D semiconductor devices, and devices comprising same (2016-02-16),
4. 9263537 - Methods of forming a semiconductor device with a protected gate cap layer and the resulting device (2016-02-16),
5. 9219002 - Overlay performance for a fin field effect transistor device (2015-12-22),
6. 9184263 - Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices (2015-11-10),
7. 9064932 - Methods of forming gate structures by a gate-cut-last process and the resulting structures (2015-06-23),
8. 9064801 - Bi-layer gate cap for self-aligned contact formation (2015-06-23),
9. 8906754 - Methods of forming a semiconductor device with a protected gate cap layer and the resulting device (2014-12-09),
10. 8877588 - Methods of forming a three-dimensional semiconductor device with a dual stress channel and the resulting device (2014-11-04),
11. 8871582 - Methods of forming a semiconductor device with a protected gate cap layer and the resulting device (2014-10-28),
12. 8853019 - Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process (2014-10-07),
13. 8846491 - Forming a diffusion break during a RMG process (2014-09-30),
14. 8728885 - Methods of forming a three-dimensional semiconductor device with a nanowire channel structure (2014-05-20),
15. 8669147 - Methods of forming high mobility fin channels on three dimensional semiconductor devices (2014-03-11),

Title: The Innovative Journey of Daniel T Pham

Introduction: Daniel T Pham, a talented inventor hailing from Clifton Park, NY, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Daniel T Pham holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Daniel T Pham has successfully brought several inventions from concept to reality, revolutionizing industries along the way.

Collaborations: Throughout his career, Daniel T Pham has collaborated with leading research institutions, universities, and tech companies to further develop and commercialize his inventions, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Daniel T Pham's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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