Daniel T Pham

This inventor holds 16 USPTO granted patents and 2 published patent applications. Top assignees: Globalfoundries Inc., International Business Machines Corporation, Samsung Electronics Co., Ltd.. Active years: 2014-2016.

USPTO Granted Patents = 16 (Patent Applications = 2)

% Patents Active = 62.5

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 266(Granted Patents)

Company Filing History:

International Business Machines Corporation

patents

1 out of 132,107

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2014-2016

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9466491 - Methods of forming a semiconductor device with a spacer etch block cap and the resulting device (2016-10-11),

2. 9419137 - Stress memorization film and oxide isolation in fins (2016-08-16),

3. 9263585 - Methods of forming enhanced mobility channel regions on 3D semiconductor devices, and devices comprising same (2016-02-16),

4. 9263537 - Methods of forming a semiconductor device with a protected gate cap layer and the resulting device (2016-02-16),

5. 9219002 - Overlay performance for a fin field effect transistor device (2015-12-22),

6. 9184263 - Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices (2015-11-10),

7. 9064932 - Methods of forming gate structures by a gate-cut-last process and the resulting structures (2015-06-23),

8. 9064801 - Bi-layer gate cap for self-aligned contact formation (2015-06-23),

9. 8906754 - Methods of forming a semiconductor device with a protected gate cap layer and the resulting device (2014-12-09),

10. 8877588 - Methods of forming a three-dimensional semiconductor device with a dual stress channel and the resulting device (2014-11-04),

11. 8871582 - Methods of forming a semiconductor device with a protected gate cap layer and the resulting device (2014-10-28),

12. 8853019 - Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process (2014-10-07),

13. 8846491 - Forming a diffusion break during a RMG process (2014-09-30),

14. 8728885 - Methods of forming a three-dimensional semiconductor device with a nanowire channel structure (2014-05-20),

15. 8669147 - Methods of forming high mobility fin channels on three dimensional semiconductor devices (2014-03-11),

Title: The Innovative Journey of Daniel T Pham

Introduction: Daniel T Pham, a talented inventor hailing from Clifton Park, NY, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Daniel T Pham holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Daniel T Pham has successfully brought several inventions from concept to reality, revolutionizing industries along the way.

Collaborations: Throughout his career, Daniel T Pham has collaborated with leading research institutions, universities, and tech companies to further develop and commercialize his inventions, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Daniel T Pham's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the world of inventions.

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