The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Mar. 09, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Abner Bello, Clifton Park, NY (US);
Xiuyu Cai, Niskayuna, NY (US);
Hugh Porter, Clifton Park, NY (US);
Daniel Pham, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/324 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7847 (2013.01); H01L 21/31055 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01);
Abstract
A method of straining fins of a FinFET device by using a stress memorization film and the resulting device are provided. Embodiments include providing a plurality of bulk Si fins, the plurality of bulk Si fins having a recessed oxide layer therebetween; forming a stress memorization layer over the plurality of bulk Si fins and the recessed oxide layer; annealing the stress memorization layer, the plurality of bulk Si fins, and the recessed oxide layer; and removing the stress memorization layer.