The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Sep. 17, 2013
Globalfoundries Inc., Grand Cayman, KY;
Zhenyu Hu, Clifton Park, NY (US);
Andy Wei, Queensbury, NY (US);
Qi Zhang, Mechanicville, NY (US);
Richard J. Carter, Saratoga Springs, NY (US);
Hongliang Shen, Ballston Lake, NY (US);
Daniel Pham, Clifton Park, NY (US);
Sruthi Muralidharan, Troy, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Approaches for improving overlay performance for an integrated circuit (IC) device are provided. Specifically, the IC device (e.g., a fin field effect transistor (FinFET)) is provided with an oxide layer and a pad layer formed over a substrate, wherein the oxide layer comprises an alignment and overlay mark, an oxide deposited in a set of openings formed through the pad layer and into the substrate, a mandrel layer deposited over the oxide material and the pad layer, and a set of fins patterned in the IC device without etching the alignment and overlay mark. With this approach, the alignment and overlay mark is provided with the fin cut (FC) layer and, therefore, avoids finification.