The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Jun. 19, 2013
Globalfoundries Inc., Grand Cayman, KY;
Daniel Pham, Clifton Park, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Andy Wei, Queensbury, NY (US);
Nicholas V. LiCausi, Watervliet, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Embodiments herein provide approaches for forming a diffusion break during a replacement metal gate process. Specifically, a semiconductor device is provided with a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate; a dielectric material over an epitaxial junction area; an opening formed between the set of RMG structures and through the set of fins, wherein the opening extends through the dielectric material, the expitaxial junction area, and into the substrate; and silicon nitride (SiN) deposited within the opening to form the diffusion break.