The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Dec. 30, 2013
Globalfoundries Inc., Grand Cayman, KY;
Xiuyu Cai, Niskayuna, NY (US);
Ajey Poovannummoottil Jacob, Albany, NY (US);
Daniel T. Pham, Clifton Park, NY (US);
Mark V. Raymond, Schenectady, NY (US);
Christopher M. Prindle, Poughkeepsie, NY (US);
Catherine B. Labelle, Wappingers Falls, NY (US);
Linus Jang, Clifton Park, NY (US);
Robert Teagle, Hopewell Junction, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrificial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the sidewall spacers, removing the sacrificial gate structure to define a replacement gate cavity positioned between the sidewall spacers, forming a replacement gate structure in the replacement gate cavity, forming a tensile-stressed gate cap layer above the replacement gate structure and within the replacement gate cavity and, after forming the tensile-stressed gate cap layer, removing the tensile-stressed layer of insulating material.