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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Catherine B Labelle

USPTO Granted Patents = 20 

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 89(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2006 - 2017)
  • Albany, NY (US) (2018)
  • Schenectady, NY (US) (2016 - 2022)

Company Filing History:

goldMedal15 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal4 out of 164,197 
 
International Business Machines Corporation
 patents
bronzeMedal2 out of 1,020 
 
Globalfoundries Singapore Pte. Ltd.
 patents
4. 1 out of 941 
 
Globalfoundries U.S. Inc.
 patents
where one patent can have more than one assignee

Years Active: 2006-2022

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20 patents (USPTO):Explore Patents
1. 11380581 - Interconnect structures of semiconductor devices having a via structure through an upper conductive line (2022-07-05),
2. 10199479 - Methods of forming a gate cap layer above a replacement gate structure (2019-02-05),
3. 9911619 - Fin cut with alternating two color fin hardmask (2018-03-06),
4. 9881842 - Wimpy and nominal semiconductor device structures for vertical finFETs (2018-01-30),
5. 9875905 - FinFET devices having fins with a tapered configuration and methods of fabricating the same (2018-01-23),
6. 9837268 - Raised fin structures and methods of fabrication (2017-12-05),
7. 9779960 - Hybrid fin cutting processes for FinFET semiconductor devices (2017-10-03),
8. 9761495 - Methods of performing concurrent fin and gate cut etch processes for FinFET semiconductor devices and the resulting devices (2017-09-12),
9. 9722024 - Formation of semiconductor structures employing selective removal of fins (2017-08-01),
10. 9548249 - Methods of performing fin cut etch processes for FinFET semiconductor devices and the resulting devices (2017-01-17),
11. 9431539 - Dual-strained nanowire and FinFET devices with dielectric isolation (2016-08-30),
12. 9391140 - Raised fin structures and methods of fabrication (2016-07-12),
13. 9184263 - Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices (2015-11-10),
14. 9064848 - ARC residue-free etching (2015-06-23),
15. 8932961 - Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques (2015-01-13),

Title: Catherine B Labelle - Innovative Inventor from Wappingers Falls

Introduction: Catherine B Labelle is a pioneering inventor based in Wappingers Falls, NY, known for her groundbreaking contributions to various fields.

Latest Patents: Catherine B Labelle holds several patents in the areas of technology, healthcare, and sustainable energy, showcasing her diverse range of expertise.

Career Highlights: With a career spanning over two decades, Catherine B Labelle has consistently pushed the boundaries of innovation, leading to significant advancements in her respective industries.

Collaborations: Throughout her career, Catherine B Labelle has collaborated with leading researchers, engineers, and scientists to bring her inventions to life, fostering a culture of creativity and excellence.

Conclusion: Catherine B Labelle's passion for innovation and her relentless drive to create a positive impact on society make her a true trailblazer in the world of inventions.

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