The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Nov. 03, 2014
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Xiang Hu, Beacon, NY (US);
Richard S. Wise, Ridgefield, CT (US);
Habib Hichri, Poughkeepsie, NY (US);
Catherine Labelle, Wappingers Falls, NY (US);
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
Antireflective residues during pattern transfer and consequential short circuiting are eliminated by employing an underlying sacrificial layer to ensure complete removal of the antireflective layer. Embodiments include forming a hard mask layer over a conductive layer, e.g., a silicon substrate, forming the sacrificial layer over the hard mask layer, forming an optical dispersive layer over the sacrificial layer, forming a silicon anti-reflective coating layer over the optical dispersive layer, forming a photoresist layer over the silicon anti-reflective coating layer, where the photoresist layer defines a pattern, etching to transfer the pattern to the hard mask layer, and stripping at least the optical dispersive layer and the sacrificial layer.